| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a cold electron emission element of a field emission type, in which a localized big current is suppressed without raising an operating voltage, a current variation can be reduced to the minimum, and in addition, a low cost and a large area can be easily obtained by using a glass board, by loading a current limiting function in an element itself by using semiconductor thin film, and its manufacturing method. SOLUTION: As for a cold electron emission element of field emission type, in which a conductive layer 6, an insulating layer 3 and a gate electrode 4 are laminated on an insulating board 1, an opening part A reaching a conductive board is provided in the gate electrode and the insulating layer, and an emitter is formed on the conductive board in the opening part so as not to come in contact with the gate electrode, a semiconductor thin film layer 2 is provided on the insulating board, and the emitter 5 and the conductive layer 6 are formed on the same plane on the semiconductor thin film layer electrically through the semiconductor thin film.</p> |
