| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory cell that does not require a large capacitance capacitor, such as DRAM and enables microstructuring of dimensions. SOLUTION: This semiconductor memory cell has first and second primary planes A1 and A2 and conductive regions SC1 , SC2 , SC3 and SC4 and comprises a first conductive transistor for reading TR1 and a second conductive transistor for switching TR2 . The source and drain regions of the transistor TR1 are constituted of conductive regions SC4 and SC1 . A channel formed region CH1 is constituted of a surface region, including the first primary plane A1 of the region SC2 . The source and drain regions of the transistor for switching TR2 is constituted of conductive regions SC3 and SC2 . The channel formed region CH2 is constituted of a surface region, including the second primary plane A2 of the region SC1 . The gate regions of the transistors TR1 and TR2 , the region SC3 , the region SC4 , the other source and drain regions of the transistor TR2 are connected to a word line, the write information setting line, a bit line, and a required voltage respectively. |
