发明名称 |
METHODS FOR REDUCING MASK EROSION DURING PLASMA ETCHING |
摘要 |
A method for reducing erosion of a mask while etching a feature in a first layer underlying the mask is disclosed. The first layer is disposed on a substrate, with the substrate being positioned on a chuck within a plasma processing chamber. The method includes flowing an etchant source gas into the plasma processing chamber and forming a plasma from the etchant source gas. The method further includes pulsing an RF power source at a predefined pulse frequency to provide pulsed RF power to the chuck. The pulsed RF power has a first frequency and alternates between a high power cycle and a low power cycle at the pulse frequency. The pulse frequency is selected to be sufficiently low to cause polymer to be deposited on the mask during the low power cycle.
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申请公布号 |
WO9940607(A1) |
申请公布日期 |
1999.08.12 |
申请号 |
WO1999US02224 |
申请日期 |
1999.02.02 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
WINNICZEK, JAROSLAW, W.;VAHEDI, VAHID |
分类号 |
H05H1/46;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01J37/32 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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