METHOD OF PRODUCING SILICON SINGLE CRYSTAL AND SINGLE CRYSTAL SILICON WAFER

摘要

A method of producing a silicon single crystal grown by the Czochralski method, wherein a crystal with a predetermined length is pulled up while the average pulling speed is changed a plurality of times, the relationship between the average pulling speed of each pulling length and the OSF ring diameter is found, an average pulling speed pattern for producing/vanishing OSF rings at desired positions according to the results of the relationship, and a crystal is grown in accordance with the average pulling speed pattern.