发明名称 PLASMA ASSISTED PROCESSING CHAMBER WITH SEPARATE CONTROL OF SPECIES DENSITY
摘要 The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber (102) and at least one collateral chamber (104). The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter (108) interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.
申请公布号 WO9940609(A1) 申请公布日期 1999.08.12
申请号 WO1999US02718 申请日期 1999.02.08
申请人 APPLIED MATERIALS, INC. 发明人 YIN, GERALD;KOLANDENKO, ARNOLD;SHAN, HONG, CHING;LOEWENHARDT, PETER;LEE, CHII;YE, YAN;QIAN, XUEYN;XU, SONGLIN;CHEN, ARTHUR;SATO, ARTHUR;GRIMBERGEN, MICHAEL;MA, DIANA;YAMARTINO, JOHN;YAN, CHUN;ZAWALSKI, WADE
分类号 H05H1/46;H01J37/32;H01L21/302;H01L21/3065 主分类号 H05H1/46
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