| 摘要 |
<p>An adjustment method of forming marks used for characteristic measurements of an optical system such as an alignment sensor of an exposure system for semiconductor manufacture, while accurately correcting the aberration of the optical system. A wafer (11) is provided with a first mark (DM1) including groove patterns (31a) of a width (a) and a pitch (P) and extending along the direction of measurement and a second mark (DM2) including groove patterns (32a) of a width (c) and a pitch (P) and extending along the direction of measurement, with the two marks adjacent to each other. The groove patterns (31a) of the first mark have a different duty ratio (=a/P) from the duty ratio (=c/P) of the groove patterns (32a) of the second mark. The spacing between the images of the two marks (DM1 and DM2) is measured to determine the error of measurement with respect to the designed value, and the optical system is adjusted to minimize the error.</p> |
