Verfahren zur Herstellung eines Leistungshalbleiterbauelementes

摘要

The method involves one step of forming a structure with doped regions (2) on each surface of two substrates (1) of electrically conductive doped semiconductor material. In the second step the substrates are thinned from an opposing surface. In the third step these surfaces are permanently and electrically conductively connected together. The third step may be carried out using wafer bonding. The third step is preferably carried out at temperatures less than 350 deg. C. In the first step structures of one or more IGBTs or one or more GTO thyristors may be formed.