Dielectric capacitor especially a ferroelectric capacitor for a RAM

摘要

A dielectric capacitor (18-20), buried in a trench (17a, 17b) in an interlevel insulation (17), is new. Independent claims are also included for the following: (a) a process for producing the above buried dielectric capacitor (18-20); and (b) a dielectric memory comprising the above buried dielectric capacitor (18-20). Preferred Features: The capacitor dielectric film (19) comprises: (i) a ferroelectric dielectric selected from Bi2SrTa2O9 (SBT), Bi2SrTa2-xNbxO9 (SBTN), Pb(Zr, Ti)O3 (PZT) or (Pb, La)(Zr, Ti)O3 (PLZT); or (ii) a high dielectric constant dielectric selected from Ta2O5, (Ba, Sr)TiO3 (BST) or SrTiO3 (STO).