Method of producing acceleration sensors

摘要

PCT No. PCT/DE96/01236 Sec. 371 Date Oct. 27, 1997 Sec. 102(e) Date Oct. 27, 1997 PCT Filed Jul. 9, 1996 PCT Pub. No. WO97/04319 PCT Pub. Date Feb. 6, 1997A method for producing acceleration sensors is proposed, in which a silicon layer that is deposited in an epitaxial application system is used. Above sacrificial layers (2) applied to the substrate (1), the material grows in the form of a polysilicon layer (6), which has a certain surface roughness. By application of a photoresist and by a wet etching process, this surface roughness is eliminated. Alternatively, chemical-mechanical smoothing is contemplated.