发明名称 |
Split gate type transistor memory device |
摘要 |
Split gate type transistor made by the steps of: forming a semiconductor substrate; forming a floating gate electrode over the semiconductor substrates the floating gate electrode having at least one lateral face portion; and nitrating the at least one lateral face portion to form a nitrogen-containing layer.
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申请公布号 |
US5936883(A) |
申请公布日期 |
1999.08.10 |
申请号 |
US19970825109 |
申请日期 |
1997.03.27 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
KUROOKA, KAZUMI;FUKASE, KENJI |
分类号 |
G11C16/04;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;(IPC1-7):G11C13/00 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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