发明名称 |
Self-aligned silicide gate technology for advanced submicron MOS devices |
摘要 |
A deep submicron MOS device having a self-aligned silicide gate structure and a method for forming the same is provided so as to overcome the problems of poly-Si depletion and boron penetration. A first Nickel silicide layer is formed between a gate oxide and a polycrystalline silicon gate electrode. Further, second Nickel silicide layers are formed over highly-doped source/drain regions. In this fashion, the reliability of the MOS device will be enhanced.
|
申请公布号 |
US5937315(A) |
申请公布日期 |
1999.08.10 |
申请号 |
US19970966288 |
申请日期 |
1997.11.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG, QI;PRAMANICK, SHEKHAR;LIN, MING-REN |
分类号 |
H01L21/28;H01L21/336;H01L29/45;H01L29/49;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|