| 发明名称 |
Method for fabricating semiconductor device and method for producing liquid crystal display apparatus |
| 摘要 |
A method for fabricating a semiconductor device includes the steps of forming a semiconductor film containing silicon, implanting impurity elements to the semiconductor film, performing a dehydrogenation treatment to the semiconductor film, and activating the impurity elements in the dehydrogenated semiconductor film.
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| 申请公布号 |
US5937304(A) |
申请公布日期 |
1999.08.10 |
| 申请号 |
US19960665978 |
申请日期 |
1996.06.19 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YOSHINOUCHI, ATSUSHI;HOSODA, TAKESHI;YAMAMOTO, TOMOHIKO |
| 分类号 |
G02F1/136;G02F1/1368;H01L21/223;H01L21/336;H01L29/786;(IPC1-7):H01L21/26 |
主分类号 |
G02F1/136 |
| 代理机构 |
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代理人 |
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