| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can avoid burring during lift-off operation. SOLUTION: A pattern 2 of a photoresist is formed on a semiconductor substrate l, and then subjected to a heat treatment so that a tilt angle of a side wall of an opening in the pattern is small with respect to a plane of the substrate. Metal 3 is deposited on the laminate to form a metallic pattern. During formation of the metallic pattern, formation of the photoresist pattern is carried out so that, after the heat treatment, the tilt angle of the side wall becomes substantially constant along a full periphery of the pattern opening. More specifically, the photoresist pattern is formed so that the planar shape of each corner of the opening is of an arc such as a semi-circle, semi-ellipse, 1/4 circle or 1/4 ellipse.</p> |
