发明名称 POWER CIRCUIT FOR SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a power circuit for generating highly precise and stable negative voltage to be used for writing and erasaing a flash memory. SOLUTION: This circuit is provided with a charge pump 11 generating negative voltage, a positive voltage generating circuit section 14 for generating positive voltage, a voltage dividing circuit 12 for obtaining a second positive voltage by dividing negative voltage and positive voltage, and a control means 10 for controlling the charge pump 11 based on the second positive voltage. The circuit is provided with also an impedance conversion means 15 arranged at an output side of the positive voltage generating circuit section 14 and converting internal impedance of the positive voltage generating circuit section 14 and transmitting it.</p>
申请公布号 JPH11219596(A) 申请公布日期 1999.08.10
申请号 JP19980022006 申请日期 1998.02.03
申请人 NEC CORP 发明人 KANEKO MASATERU;OBATA HIROYUKI;AMAUCHI MASAKAZU;KATO KAZUAKI;OKU SATORU
分类号 G11C16/06;G05F1/56;G11C16/30;H02M3/07;(IPC1-7):G11C16/06 主分类号 G11C16/06
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