| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, which has a chip size larger than the exposure area of a reduction stepper and is capable of suppressing the effects of the seam of a composited image, even when the semiconductor device is manufactured by an image compositing method, and a method for manufacturing the semiconductor device. SOLUTION: A manufacturing method by which a semiconductor device having a light-receiving section composed of region formed on a substrate and having a periodic structure and a peripheral circuit section composed of regions other than the light-receiving section is characterized in that the method contains a process for exposing the semiconductor substrate by the use of a first photomask having pattern data 35a of the entire light-receiving section and another process for exposing the semiconductor substrate by the use of a second photomask provided with pattern data 37a and 39a which correspond to at least a part of the peripheral circuit section. Consequently, the effects of the seam of a composited image can be suppressed. |
