| 摘要 |
PROBLEM TO BE SOLVED: To form a high quality fine crystal silicon film, which is excellent in crystallizability, and also to contrive to raise the film-forming rate of the fine crystal silicon film, by a method wherein at the time of the film formation of the fine crystal silicon film, a metallic element for accelerating crystallization of the silicon film is added to the fine crystal silicon film. SOLUTION: A plasma CVD device is provided with a reaction chamber 101, a vacuum-exhaust means 102, a gas feed means 103, a metallic element feed source 108 for accelerating crystallization of a silicon film, a grow discharge generating means 104 and a substrate heating means 105 (heater power supply). A substrate 106 is installed on the side of an anode electrode on the means 104 and is heated by the means 105 from the room temperatures to 300 deg.C. Power, is fed through the means 104, normally in a high frequency of 13.56 MHz, but the power may have by a frequency higher than the 13.56 MHz. As gas which is used for the formation of a fine crystal silicon film, one obtained by mixing silane gas with nickel source gas consisting of hydrogen gas and metallic element gas is used. |
