| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor diode array of radiation damage resistance. SOLUTION: Semiconductor diode array 10 comprises a plurality of first semiconductor regions 12 of a first conductive type semiconductor material and a plurality of second semiconductor regions 38 of the semiconductor material of conductive type of polarity opposite to that of the first conductive type, and the first semiconductor region 12 acts as an active region of diode array, isolated from each other by at least one second semiconductor region 38. In an embodiment, the first semiconductor region 12 is further isolated from the adjoining second semiconductor region 38 by a gap region (g). The semiconductor material of opposite conductive type constituting the second semiconductor region 38 causes originally harmful effect caused by radiation damage of a semiconductor diode.
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