发明名称 IMPROVEMENT OF SINGLE CRYSTAL SILICON WAFER IN MECHANICAL RESISTANCE
摘要 PROBLEM TO BE SOLVED: To enable a silicon wafer to be bent without breaking it when a mechanical stress is applied to the wafer by a method wherein the wafer is lessened in thickness as prescribed so as to be flexible, and made to have a restoring force to recover from a deflection. SOLUTION: The first surface of a silicon wafer is subjected to chemical etching and mechanochemical polishing, wherein a holding device is provided to enable the silicon wafer to make an outer cycloid rotary motion to a polishing felt, and molecular adhesion is generated between the second surface of the silicon wafer and the surface of the holding device to enable the holding device to support the wafer to make the wafer as thin as below 80μm by polishing. The silicon wafer gets flexible to have a restoring force to cover from a deflection. By this setup, integrated circuits formed of the silicon wafer can be improved in mechanical resistance.
申请公布号 JPH11219873(A) 申请公布日期 1999.08.10
申请号 JP19980306409 申请日期 1998.10.14
申请人 ST MICROELECTRONICS SA 发明人 VANDEPUTTE JACQUES;BOURDET FLORINE
分类号 H01L21/304;C30B33/00;H01L21/02;H01L29/02;(IPC1-7):H01L21/02 主分类号 H01L21/304
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