Structure of thin film transistor and gate terminal having a capacitive structure composed of the TFT elements

摘要

A thin film transistor of an active matrix liquid crystal display unit has a gate electrode continued to a gate terminal supplied with a gate control signal, a gate insulating layer formed beneath the gate electrode and the gate terminal, source and drain electrodes formed between the gate insulating layer and an insulating layer and an amorphous silicon layer extending on the insulating layer between the source and drain electrodes, and a silicide layer is inserted between the insulating layer and the gate insulating layer so as to enhance the adhesion therebetween.