发明名称 |
TiSi2/TiN clad interconnect technology |
摘要 |
A TiSi2/TiN clad LI strap process and structure are disclosed which combine the advantages of both TiSi2 and TiN LI processes. According to the invention, the retention of a thin TiN layer between the local interconnect and contacts provides a diffusion barrier against counterdoping and relaxes the thermal budget for subsequent processing.
|
申请公布号 |
US5936306(A) |
申请公布日期 |
1999.08.10 |
申请号 |
US19950369562 |
申请日期 |
1995.01.06 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JENG, SHIN-PUU |
分类号 |
H01L21/8249;H01L21/768;H01L23/532;H01L27/06;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/8249 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|