发明名称 |
Electronic device fabrication apparatus |
摘要 |
An electronic device fabrication apparatus a reaction chamber; a cathode electrode and an anode electrode opposed to each other in the reaction chamber; a gas introduction pipe introduced into the reaction chamber for supplying reaction gas into the reaction chamber, the gas introduction pipe being electrically connected to the cathode electrode; and a high frequency power generation device for applying high frequency lower having a high exciting frequency which is included in one of a VHF band and a UHF band to the cathode electrode through the gas introduction pipe for exciting the reaction gas into a plasma state. The gas introduction pipe includes an impedance adjusting device for adjusting an impedance of the gas introduction pipe.
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申请公布号 |
US5935374(A) |
申请公布日期 |
1999.08.10 |
申请号 |
US19980102357 |
申请日期 |
1998.06.23 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
ITO, YASUHIKO;SAKAI, OSAMU |
分类号 |
H05H1/46;C23C16/50;C23C16/509;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):C23C16/00;C23C16/22 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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