发明名称 Electronic device fabrication apparatus
摘要 An electronic device fabrication apparatus a reaction chamber; a cathode electrode and an anode electrode opposed to each other in the reaction chamber; a gas introduction pipe introduced into the reaction chamber for supplying reaction gas into the reaction chamber, the gas introduction pipe being electrically connected to the cathode electrode; and a high frequency power generation device for applying high frequency lower having a high exciting frequency which is included in one of a VHF band and a UHF band to the cathode electrode through the gas introduction pipe for exciting the reaction gas into a plasma state. The gas introduction pipe includes an impedance adjusting device for adjusting an impedance of the gas introduction pipe.
申请公布号 US5935374(A) 申请公布日期 1999.08.10
申请号 US19980102357 申请日期 1998.06.23
申请人 SHARP KABUSHIKI KAISHA 发明人 ITO, YASUHIKO;SAKAI, OSAMU
分类号 H05H1/46;C23C16/50;C23C16/509;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):C23C16/00;C23C16/22 主分类号 H05H1/46
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