| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress the formation of an inverted layer by automatic doping by a method wherein the first high concentration buried impurity layer, in the shape almost equal to a beam part, is formed on the semiconductor substrate located under the beam part. SOLUTION: The pattern shape of a p+ type buried sacrificial layer 3 is formed in the single crystal silicon substrate 1 on the lower part of a deflected section 4a in the shape almost equal to the deflected section 4a by the manufacturing process of a semiconductor acceleration sensor. Also, as the p+ type buried sacrificial layer 3 is not present on the arrival part of etching of a notched part 10, the control of etching time is required for the purpose of obtaining a prescribed depth of the notched part. Accordingly, the formation of an inverted layer by automatic doping in the vicinity of the interface between the single crystal silicon substrate 1 and an epitaxial layer 4 can be suppressed, or at least the impurity concentration of the inverted layer can be lowered, and the adverse effect to the element characteristics can be lessened or removed.</p> |
