| 摘要 |
PROBLEM TO BE SOLVED: To provide a mask pattern correcting method capable of reducing the load on designer at the time of simulating the correction work of a mask pattern. SOLUTION: Parameters including a mask bias parameter for indicating the enlarging or reducing ratio of the pattern size of a mask pattern and design patterns are inputted (S11), a new design pattern is generated by applying inversion processing and rotation processing to a pattern included in the inputted design patterns in each cell unit at need (S12), a transfer image obtained by executing exposure under a prescribed transfer condition is simulated by using a mask pattern generated from the design patterns (S19), and the mask pattern is corrected based on an evaluation result (S21). |
