| 摘要 |
PROBLEM TO BE SOLVED: To greatly improve the efficiency of a semiconductor device by a method wherein a structure, having the self-similarity defined by a specific formula in the arbitrary space of quantum well prescribed by a specific formula, is formed. SOLUTION: This device is a semiconductor device at least containing a quantum well structure, and the energy of the conductive band or the balence band on the positions (x, y and z) of the quantum well structure is indicated by E (x, y and z). Pertaining to the arbitrary space of the semiconductor quantum well structure, in which the positions x, y and z are prescribed by x1<=x<=x2, y1<=y<=y2 and z1<=z<=z2, the W(v) defined by the formula is computed. The semiconductor device has a quantum well structure, wherein W(v) is in proportion to va ('a' is the constant which is not a positive number), in the finite continued range having (v), provided v=|(x1-x2), (y1-y2) and (z1-z2)|. Eo is the average value of the E (x, y and z) of the space prescribed by the x1<=x<=x2, y1<=y<=y2, and z1<=z<=z2 of the quantum well structure. |
