| 摘要 |
FIELD: semiconductor quantum electronics, design of low-mode laser diodes used in fiber-optical communication systems, pumping of solid and fiber lasers, development of medical and laser technological equipment. SUBSTANCE: mounting plate of laser diode is made from high-resistance gallium arsenide. Sequences of layers including titanium layers nearest to each mounting surface, gold and indium used as spelter are located on its mounting surfaces in mirror symmetry. EFFECT: improved heat-compensating characteristics of mounting plate of laser diode and simplified assembly of it, enhanced reproducibility of its assembly, improvement of number of its parameters namely: operational reliability, stabilization of wave length and output power, improved pattern of far field and reduced threshold currents. 1 cl, 3 dwg
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