发明名称 HIGH FREQUENCY POWER AMPLIFIER
摘要 <p>PROBLEM TO BE SOLVED: To maximize the output power that is generated by a double wave processing circuit and also to improve most the power adding efficiency. SOLUTION: In this power amplifier, an output matching circuit 7 including a double wave processing circuit 9 that is short-circuited by the frequency double as much as the basic frequency is connected to the output terminal of an amplifying output FET(field effect transistor) 1 via a lead inductor 6. Then a double wave resonance circuit 16 where an inductor 14 is connected in series to a capacitor 15 is connected in parallel to the inductor 6. In such a constitution, the impedance is set at 0 against a double wave by the circuit 16. Thus, the load state is short-circuited in regard to the double wave regardless of the inductance value of the inductor 6 when the circuit 7 is viewed from at drain of the FET 1. As a result, the circuit 9 can satisfactorily show its function.</p>
申请公布号 JPH11220343(A) 申请公布日期 1999.08.10
申请号 JP19980033775 申请日期 1998.01.30
申请人 NEW JAPAN RADIO CO LTD 发明人 KIMIJIMA MASAYUKI
分类号 H03F3/60;H03F3/193;(IPC1-7):H03F3/60 主分类号 H03F3/60
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