MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of preventing the etching of a silicon film when a resist film, wherein impurity ions are implanted is removed and the damage in a silicon film or a gate insulating film and manufacturing a transistor having good characteristics without ashing residual remaining. SOLUTION: On a substrate 10, a silicon film 12, which is to become an active layer of a TFT, a gate insulating film 13 and a gate electrode 14 are formed. Thereafter, a protective film 15 comprising SiO2 is formed on the entire surface. Then, a resist film 16 is formed on a protecting film 15 in a p-channel TFT forming region A. Impurity ions are implanted into the silicon film of an n-channel TFT forming region B. Then, after the resist film 16 has been removed by ashing, the protective film 15 is removed by fluoric acid solution.