发明名称 |
Method for forming poly-via connection between load transistor drain and driver transistor gate in SRAM |
摘要 |
A manufacturing method applicable for forming a via connection to the thin film transistor in a SRAM unit which resolves the problems arising from a conventional method for forming a via for linking up the drain of a load transistor with the gate of a driver transistor in a SRAM unit by changing the processing sequence and also by forming a plug instead of a via.
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申请公布号 |
US5937291(A) |
申请公布日期 |
1999.08.10 |
申请号 |
US19970870202 |
申请日期 |
1997.06.06 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
TSAI, MENG-JIN;CHEN, KUN-CHO |
分类号 |
H01L21/768;H01L21/8244;H01L27/11;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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