发明名称 Method for forming poly-via connection between load transistor drain and driver transistor gate in SRAM
摘要 A manufacturing method applicable for forming a via connection to the thin film transistor in a SRAM unit which resolves the problems arising from a conventional method for forming a via for linking up the drain of a load transistor with the gate of a driver transistor in a SRAM unit by changing the processing sequence and also by forming a plug instead of a via.
申请公布号 US5937291(A) 申请公布日期 1999.08.10
申请号 US19970870202 申请日期 1997.06.06
申请人 UNITED MICROELECTRONICS CORP. 发明人 TSAI, MENG-JIN;CHEN, KUN-CHO
分类号 H01L21/768;H01L21/8244;H01L27/11;(IPC1-7):H01L21/823 主分类号 H01L21/768
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