发明名称 Fabrication of etched features
摘要 Disclosed is a method of fabricating electronic components on a semiconductor substrate by etching features in the substrate through a mask including apertures which are separated by a prescribed spacing. Etching is continued until the etched features merge into a single channel. This technique can be used to form channels having nonuniform shapes, or could be used to monitor the end point of an etching operation.
申请公布号 US5935451(A) 申请公布日期 1999.08.10
申请号 US19970806229 申请日期 1997.02.24
申请人 LUCENT TECHNOLOGIES INC. 发明人 DAUTARTAS, MINDAUGAS FERNAND;WONG, YIU-HUEN
分类号 H01L21/306;G02B6/36;G02B6/42;H01L21/308;H01L31/12;H01S5/00;H01S5/022;(IPC1-7):H01L21/302 主分类号 H01L21/306
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