发明名称 |
Multilayer quadruple gate field effect transistor structure for use in integrated circuit devices |
摘要 |
A quadruple gate field effect transistor (FET) is provided on the semiconductor-on-insulator or semiconductor-on-insulator (SOI) structure or a bulk semiconductor structure. The silicon substrate is surrounded by a polysilicon material on at least three sides to form a gate. Additionally, the substrate can be surrounded by a fourth side to form a quadruple gate structure. The SOI structure can be comprised of two layers of SOI structures. Interlayer vias can be provided to connect each layer of the two-layer structure.
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申请公布号 |
US5936280(A) |
申请公布日期 |
1999.08.10 |
申请号 |
US19970837557 |
申请日期 |
1997.04.21 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LIU, YOWJUANG WILLIAM |
分类号 |
H01L21/84;H01L27/12;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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