| 摘要 |
A physical vapor deposition chamber assembly is provided for use in depositing metal particles onto a wafer placed inside the chamber assembly. The physical vapor deposition assembly includes a chamber having an opening, and a target containing a desired metal to be deposited on a wafer placed inside the chamber, with the target adapted to be secured at the opening of the chamber. The assembly further includes an insulator positioned along the boundary of the opening, and having opposing first and second surfaces, with the second surface having a ridge extending therealong and defining a narrow horizontal ridge surface. A first O-ring is positioned between the first surface of the insulator and the chamber along the boundary of the opening, and a second O-ring is positioned between the ridge surface of the insulator and the target.
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