发明名称 |
Semiconductor devices and methods with tunnel contact hole sources |
摘要 |
Semiconductor devices and methods are disclosed in which the amount of p-type material can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication. A form of the disclosure is directed to a generally planar semiconductor device wherein a layer of p-type semiconductor material is disposed over a layer of n-type semiconductor material, and an electric potential is coupled between the p-type layer and the n-type layer, and wherein current in the device that is lateral to the plane of the layers is coupled into the p-type layer. A tunnel junction is adjacent the p-type layer for converting the lateral current into hole current. In an embodiment of this form of the disclosure, the tunnel junction is an n+/p+ junction oriented with the p+ portion thereof adjacent the p-type layer. The lateral current can be electron current in the n+ layer and/or electron current in a further layer of n-type material disposed over the tunnel junction.
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申请公布号 |
US5936266(A) |
申请公布日期 |
1999.08.10 |
申请号 |
US19970950653 |
申请日期 |
1997.10.15 |
申请人 |
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
发明人 |
HOLONYAK, JR., NICK;WIERER, JONATHAN J.;EVANS, PETER W. |
分类号 |
H01L29/88;H01L33/04;H01L33/14;H01L33/30;H01S5/183;H01S5/20;H01S5/22;H01S5/323;(IPC1-7):H01L33/00;H01S3/19 |
主分类号 |
H01L29/88 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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