Manufacturing method for membrane lithography mask with mask fields

摘要

The invention relates to a manufacturing method for a membrane mask suitable for particle beams with mask fields, which are bounded by thin support walls. The deep plasma etching for the formation of the support walls is halted shortly before reaching the membrane and the last mu m before the membrane removed by wet-chemical etching. A high etch selectivity can be achieved using an alkaline etching solution. The support walls 1 are turned by 45 DEG to the (110) direction or oriented parallel to the (100) plane, so that the structures restricted by (111) planes are avoided.