发明名称 Output driver circuit in semiconductor device
摘要 A power-supply circuit 121 generates a potential Vw which is approximately the higher of a power-supply potential VDD and a potential Vo at an output to set the potential Vw at an N-well of a pMOS pull-up transistor Qu equal to or higher than the potential at the source S and the drain D of the pMOS transistor Qu. The power-supply circuit 122 generates a potential Vs approximately equal to VDD-Vth when Vo<VDD, and turns off when Vo>VDD to prevent a current from flowing from the output OUT through the pMOS transistor Qu to the power-supply potential VDD, where Vth is the threshold voltage of the MOS transistors.
申请公布号 US5936456(A) 申请公布日期 1999.08.10
申请号 US19970934510 申请日期 1997.09.17
申请人 FUJITSU LIMITED 发明人 NAKA, NAOAKI
分类号 H03K17/08;H03K17/16;H03K17/687;H03K19/003;H03K19/0175;(IPC1-7):H03K17/687 主分类号 H03K17/08
代理机构 代理人
主权项
地址
您可能感兴趣的专利