| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectromotive force element, wherein photoconductive characteristics such as photoelectric transfer efficiency, release voltage, short photoelectric current, low illuminance release voltage, and leakage current is improved sharply. SOLUTION: Related to a photoelectromotive element wherein a backside reflection layer 102, a transparent conductive layer 103, a semiconductor layer 105, which being of non-single crystal silicon group material containing hydrogen, comprises at least one semiconductor junction, and an upper part transparent electrode 106 of metal oxide are laminated sequentially on a base body 101, with a collection electrode 107 provided on the upper part transparent electrode 106, the transparent conductive layer 103 is made of zinc oxide, and the region wherein a plurality of arcs of radius of curvature 300 Å to 6 μm in crosssectional form of a light-incident side surface 104 and elevation angle at the center of curvature which is 30 or higher to 155 degrees or lower are connected plurally contains by 80% or more relative to the entire crosssectional region. |
