发明名称 |
Method of forming lightly doped drain region and heavily doping a gate using a single implant step |
摘要 |
A method of making an IGFET includes providing a semiconductor substrate with an active region, forming a gate over the active region, forming displacement material segments over portions of the active region outside the gate, implanting a dopant into the gate, the displacement material segments and the active region using a single implant step, such that a peak concentration of the dopant is in the gate and the displacement material segments, and a light concentration of the dopant implanted through one of the displacement material segments forms a lightly doped drain region in the active region, and forming a source and a drain wherein the drain includes the lightly doped drain region. In this manner, the lightly doped drain region and heavy doping for the gate can be provided using a single implant step.
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申请公布号 |
US5937302(A) |
申请公布日期 |
1999.08.10 |
申请号 |
US19970781092 |
申请日期 |
1997.01.08 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER, MARK I.;HAUSE, FREDERICK N. |
分类号 |
H01L21/265;H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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