发明名称 |
Thin-film electron emitter device having a multi-layer top electrode for suppressing degradation of an insulating layer and application apparatus using the same |
摘要 |
A thin-film electron emitter device is provided with a multilayer structure including upper and lower electrodes with an insulative or dielectric layer being sandwiched therebetween. The upper or "top" electrode is itself formed as a multilayer structure. For example, in one embodiment, the upper electrode is formed as a three layer lamination of an interface layer formed on the insulative layer, an intermediate or "middle" layer stacked on the interface layer and a surface layer stacked on or above the middle layer. The middle layer is made of a chosen material which is greater in sublimation enthalpy than the surface layer and yet less than the interface layer. When appropriate, the surface layer may be omitted providing two-layer structure rather than the three-layer structure.
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申请公布号 |
US5936257(A) |
申请公布日期 |
1999.08.10 |
申请号 |
US19970822924 |
申请日期 |
1997.03.21 |
申请人 |
HITACHI, LTD. |
发明人 |
KUSUNOKI, TOSHIAKI;SUZUKI, MUTSUMI |
分类号 |
H01J1/30;H01J1/312;H01J19/24;H01J29/04;H01J31/12;H01J37/073;(IPC1-7):H01L29/06 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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