| 摘要 |
A method of fabricating a semiconductor device for forming interconnections formed on a semiconductor device in multiple layers above and below an organic interlayer insulation film (19) as an insulation film, wherein the organic interlayer insulation film (19) having its insulation resistance lowered on receiving damage by plasma by sputter etching to be performed to reduce a contact resistance between lower layer interconnections (13a, 13b) and upper layer interconnections (21a, 21b) is subjected to ashing or ashing and annealing to thereby remove a charged-up layer (19a), which is a surface layer subjected to the plasma damage, to increase an insulation resistance value, thereby preventing a leak current from flowing between the upper layer interconnections (21a, 21b). <IMAGE> |
