| 摘要 |
PURPOSE:To provide a waveguide type photodetector which photoelectrically converts signal light rays into electrical signals high in efficiency. CONSTITUTION:An InGaAsP clad layer 2, an InGaAsP core layer 3, clad layers 4 and 5 of InGaAsP multilayered film, and an InGaAsP layer 6 are arranged on an InP substrate 1 in this order. Light absorbing layers and light transmitting layers are alternately laminated to form the multilayered films 4 and 5. The multilayered film 5 is formed on the multilayered film 6 forming a ridge. The clad layers 4 and 5 are made to serve as a light absorbing layer, and as guided light rays are photoelectrically converted even in the layers 4 and 5, signal light rays can be photoelectrically converted enough even if the core layer 3 is lessened in light trapping properties. |
