| 摘要 |
PROBLEM TO BE SOLVED: To relieve defects in a film of a thin-film polycrystalline Si semiconductor layer, where conductive controlling impurities are slightly doped by making the hydrogen content in an nearby film contact face with a thin-film semiconductor layer where reverse conductive control impurities are doped at high densities larger comparing to that in parts. SOLUTION: After a polycrystalline Si layer 3 doped with P in a high density is formed, a substrate is heated after vacuum exhausting a chamber, SiH4 gas at 100 sccm, H2 gas at 100 sccm and PH3 gas diluted to 5% with H2 gas at 0.2 sccm are made to flow, and pressure is set at 50 Pa. A high frequency electric power is impressed to generate a plasma discharge. PH3 gas which is diluted to 5% with SiH4 and H2 gases is controlled to repeat introducing and cutting-off at every 5 sconds. On the other hand, when H2 gas is introduced into the chamber at all times, film piling and H2 plasma processing are performed every 5 seconds to form a crystal silicon film having superior crystal properties. A polycrystalline silicon layer 4 is formed by repeating this operation for 6 hours, and defects in the film can be relieved. |
