发明名称 MAGNETO-RESISTANCE EFFECT ELEMENT
摘要 PROBLEM TO BE SOLVED: To obtain a large resistance changing rate, a superior sensitivity and a large output by providing a first ferromagnetic film having a laminating structure of a ferromagnetic film and a nonmagnetic film and making the magnetization direction of the ferromagnetic film to be arranged in a antiferromagnetic aligning manner by mutal action. SOLUTION: A ferromagnetic film 23 and a nonmagnetic film 24 are alternatively laminated. For example, if they are laminated in four layers, the top surface is the film 24 and the film 23 is laminated at the joint surface with a nonmagnetic intermediate layer 25 in order to produce a nonmagnetic/ ferromagnetic boundary surface. Since the magnetization directions of the ferromagnetic films are reversed for every layer, the electrons having either spin directions are not able to pass the films, which are magnetized in the reversed directions of the spin, scattered and thus, the resistance becomes larger. In order words, electrons are scattered at the boundary surfaces of a first ferromagnetic film 22 and a second ferromagnetic film 26. In addition, a scattering occurs in the film 22 and the two operations are superimposed and a larger resistance variation is generated.
申请公布号 JPH11213355(A) 申请公布日期 1999.08.06
申请号 JP19980013076 申请日期 1998.01.26
申请人 VICTOR CO OF JAPAN LTD 发明人 NOMURA AKIHIKO
分类号 G11B5/39;H01F10/08;H01F10/14;H01F10/32;(IPC1-7):G11B5/39 主分类号 G11B5/39
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