| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can realize connection of polycide wirings with low contact resistance, simply, and at low cost. SOLUTION: This semiconductor device has a first polycide wiring 4 which is made on a silicon substrate 1 and includes a first doped polysilicon layer 5 and a first tungsten silicide layer 6 formed on this doped polysilicon layer, an interlayer insulating film 7 which is formed on the first polycide wiring and has an opening leading to the first doped polysilicon layer of the first polycide wiring, and a second polycide wiring 12 which is formed on the interlayer insulating film and includes a second doped polysilicon layer 9 connected through the opening and a second tungsten silicide layer 10 made on the doped polysilicon layer. That is, the structure is such that the first doped polysilicon layer and second doped polysilicon layer contact with each other at the sidewall part of the first polycide wiring, within the opening. |
