| 摘要 |
PROBLEM TO BE SOLVED: To provide a small-size memory point by a CMOS technology, by modifying gate-well resistance by means of current flowing from the drain and the source to a well, and programming a memory point depending on the state of the gate in the programming stage. SOLUTION: During programming, a well 1 of a MOS transistor is connected to the reference potential. The drain 5 and the source 4 are connected to a source of current so that a space charge region may be expanded along the entire length of the channel, and the drain 5 and the source 4 may be biased so that an avalenche may appear in the opposite direction to the junction between the drain 5 and the source 4. The gate 6 is set to the reference potential when a memory point needs not to be programmed while set to the other potential when the memory point needs to be programmed. Furthermore, a means for detecting whether the impedance between the gate 6 and the well 1 is high or low during reading is installed. |
