| 摘要 |
PROBLEM TO BE SOLVED: To etch so that base sputtered substance does not adhere to a side wall of a planarized film by using halogen based gas containing oxygen or nitrogen as a component, as gas for etching the planarized film and accelerating reactive etching to the base layer. SOLUTION: A planarized film 2 is formed as a thick resist layer on a base layer 1. Next, in etching the planarized film 2, gas for etching the planarized film 2 and accelerating reactive etching to the base layer is used. The planarized film 2 is thus etched by RIE with gas such that chlorine is added to oxygen gas. In such kinds of gas, an etching is performed so that the base material is not adhered to a side wall of the planarized film 2 since chlorine acts as an etching agent to a base etched substance when over-etching the base layer 1 of aluminum. Oxygen gas may be replaced by nitrogen gas or a mixed gas of oxygen gas and nitrogen gas. |
