METHOD AND APPARATUS FOR SEMICONDUCTOR SUBSTRATE WITH ELECTRODE FILM

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing an Si semiconductor substrate with a surface W or WSi2 electrode, while an oxide material is prevented from producing on the surface of the Si substrate. SOLUTION: An Si substrate is put in a vacuum vessel with oxygen and moisture partial pressure of 1×10<-9> Torr or below. A raw gas is fed at a heated state with pressure of 5×10<-8> to 5×10<-4> Torr or below to form a W or WSi2 film as an electrode film on the surface of the Si semiconductor substrate.