发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To prevent complexity of a circuit constitution and a layout and facilitate control on write prior to deletion. SOLUTION: A binary counter 22 is set at a most significant point of an address counter 19 sequentially generating addresses of a memory cell array 11. Upon completion of the write prior to deletion to the memory cell array, the binary counter 22 forcibly selects a spare row 12, thus enabling the write prior to erasing. In the write prior to deletion, whether or not verification is to be executed is judged from a state of a coincidence signal RDHIT output from a failing address memory part 21.</p>
申请公布号 JPH11213691(A) 申请公布日期 1999.08.06
申请号 JP19980008592 申请日期 1998.01.20
申请人 TOSHIBA CORP 发明人 KURIYAMA MASAO;TAURA TADAYUKI;SAITO SAKATOSHI
分类号 G11C16/02;G11C16/06;G11C16/14;G11C16/34;G11C29/04;(IPC1-7):G11C29/00 主分类号 G11C16/02
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