| 摘要 |
PROBLEM TO BE SOLVED: To make voids hard to be formed in an upper insulation film if the upper insulation film, etc., are formed on an upper layer, by making a memory node electrode in a shape expanded like a forward taper. SOLUTION: The semiconductor memory is such that a memory node electrode MN has a shape expanded like a forward taper between memory cells, and if a capacitor insulation film 27 or plate electrode 36 is formed on its upper layer, the spacing between the memory node electrodes MN is not made narrow, no void is formed in an upper insulation film 28 formed on its upper layer and hence the semiconductor memory can be stably manufactured. The structure that the memory node electrode MN has a shape expanded like a forward taper between the memory cells enables the great increase of the surface area of the memory node electrode MN and increase of the memory capacity. |
