| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a memory-driving apparatus which is hard to influence by a parasitic capacitance of a reference voltage, consumes less current and can operate at high speed without increasing an arrangement area of a reference voltage generation part. SOLUTION: The memory-driving apparatus has an indicating means thereby indicating by the indicating means whether a reference voltage generation part 7 is driven at all times or driven only when data are to be read out. When data are to be read out at high speed, the reference voltage generation part 7 outputs reference signals VP, VN at all times, so that sense amplifiers 8a-8d can read out data at high speed without being influenced by wiring capacitance 11, 12. When data are to be read out at low speed, the reference voltage generation part 7 is turned on only when the data are read out and therefore a current consumed at the reference voltage generation part is not increased. Since a precharge signal PR is of low speed, a reference voltage rises without influences of the wiring capacities. In a stop mode of the memory-driving apparatus, no current is sent at all to the reference voltage generation part 7 and the current consumed at the reference voltage generation part is not increased.</p> |
