发明名称 SELF-DETECTION-TYPE SPM PROBE AND SPM DEVICE
摘要 PROBLEM TO BE SOLVED: To appropriately detect the amount of deflection of a cantilever by excluding the influence of a carrier being generated since a leak current and light between piezo resistors is applied. SOLUTION: Impurity diffusion layers 18 and 20 consisting of a conductive type (p-type silicon substrate) and an opposite conductive type (n-well region) of a semiconductor substrate 14 are formed on a surface where piezo-resistors 22 and 24 and the semiconductor substrate 16 touch, thus performing element separation by insulation, thus excluding the influence of a carrier being generated since a leak current and light between the piezo-resistors 22 and 24 each other or between the piezo-resistors 22 and 24 are applied.
申请公布号 JPH11211736(A) 申请公布日期 1999.08.06
申请号 JP19980161175 申请日期 1998.06.09
申请人 SEIKO INSTRUMENTS INC 发明人 TAKAHASHI HIROSHI;SHIRAKAWABE YOSHIHARU;SHIMIZU NOBUHIRO;MICHEL DEPON
分类号 G01B21/30;G01B7/34;G01N23/00;G01N37/00;G01Q20/04;G01Q60/24;G01Q60/38;G21K7/00;H01J37/28;(IPC1-7):G01N37/00 主分类号 G01B21/30
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