发明名称 |
SELF-DETECTION-TYPE SPM PROBE AND SPM DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To appropriately detect the amount of deflection of a cantilever by excluding the influence of a carrier being generated since a leak current and light between piezo resistors is applied. SOLUTION: Impurity diffusion layers 18 and 20 consisting of a conductive type (p-type silicon substrate) and an opposite conductive type (n-well region) of a semiconductor substrate 14 are formed on a surface where piezo-resistors 22 and 24 and the semiconductor substrate 16 touch, thus performing element separation by insulation, thus excluding the influence of a carrier being generated since a leak current and light between the piezo-resistors 22 and 24 each other or between the piezo-resistors 22 and 24 are applied. |
申请公布号 |
JPH11211736(A) |
申请公布日期 |
1999.08.06 |
申请号 |
JP19980161175 |
申请日期 |
1998.06.09 |
申请人 |
SEIKO INSTRUMENTS INC |
发明人 |
TAKAHASHI HIROSHI;SHIRAKAWABE YOSHIHARU;SHIMIZU NOBUHIRO;MICHEL DEPON |
分类号 |
G01B21/30;G01B7/34;G01N23/00;G01N37/00;G01Q20/04;G01Q60/24;G01Q60/38;G21K7/00;H01J37/28;(IPC1-7):G01N37/00 |
主分类号 |
G01B21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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