| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystalline silicon film having high crystallinity on a substrate having an insulating surface, by holding a metal element promoting crystallization of silicon on and in contact with a silicon film formed on the substrate and then crystallizing the silicon film by heating processing. SOLUTION: First, a silicon oxide film 102 is formed as an underlying film on a quartz substrate 101. The silicon oxide film 102 is formed so as to prevent subsequent diffusion of impurity from inside the quartz substrate 101 into a silicon film. Next, an amorphous silicon film 103 is formed. Next, a nickel acetate solution is applied to the surface of the amorphous silicon film 103 to form a liquid film 105 of the nickel acetate solution. After that, spin coating is carried out using a spinner 104. At the same time, the excess nickel acetate solution is blown off. Thus, the nickel element is held in contact with the surface of the amorphous silicon film 103. Then, after the amorphous silicon film is heated at a temperature of approximately 800-1100 deg.C, it is gradually cooled. The amorphous silicon film 103 is transformed to a crystalline silicon film 106 by the heating processing. |
